Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption
نویسندگان
چکیده
Most current resistive memory has the problems of high and unstable threshold voltages device misread rates caused by low switching ratios. To address these problems, an Al/poly(methyl methacrylate) (PMMA)/silkworm hemolymph:gold nanoparticles/PMMA/indium tin oxide is fabricated adding PMMA layers above below active layer. The not only stable bipolar characteristics with a ON/OFF ratio but also lower more voltage. Potentiation, depression, spike-time-dependent plasticity at biological synapses are realized using this device. successfully on flexible substrate, can still maintain working state after 104 bending cycles. This research opens new door for future realization artificial in neural network hardware.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202201032